Thermal conductive film

ABSTRACT

An adhesive film includes a porous metal layer having a plurality of pores therein, a first adhesive layer on one side of the porous metal layer, an adhesive substance at least partially filling the pores of the porous metal layer, and a plurality of first thermal conductive members distributed in the first adhesive layer.

CROSS-REFERENCE TO RELATED APPLICATIONS

This is a continuation application based on pending U.S. applicationSer. No. 16/540,495, filed on Aug. 14, 2019, the entire contents ofwhich is hereby incorporated by reference.

Korean Patent Application No. 10-2018-0171499, filed on Dec. 28, 2018,in the Korean Intellectual Property Office, and entitled: “AdhesiveFilm, Semiconductor Apparatus Using the Same, and Semiconductor PackageIncluding the Same,” is incorporated by reference herein in itsentirety.

BACKGROUND 1. Field

Embodiments relate to an adhesive film, a semiconductor apparatus usingthe same, and a semiconductor package including the same.

2. Description of the Related Art

Adhesives are used in a wide variety of applications, such as sheets,films, labels, and tapes, due to their easy usability, and materials towhich adhesives are attached also include a wide variety of materials,such as organic materials, metallic materials, and inorganic materials.Applications of adhesives have recently been increasingly expanding overdisplays, touch screens, touch panels, touch lenses, electronic devices,electric electrodes, LED illuminations, and so on, which require highfunctionality in various properties and high durability and reliabilityagainst moisture, corrosion, and temperature.

SUMMARY

Embodiments are directed to an adhesive film, including a porous metallayer having a plurality of pores therein, a first adhesive layer on oneside of the porous metal layer, an adhesive substance at least partiallyfilling the pores of the porous metal layer, and a plurality of firstthermal conductive members distributed in the first adhesive layer.

Example embodiments are also directed to a semiconductor apparatus,including a substrate, an exothermic device on the substrate, and anadhesive film between the substrate and the exothermic device. Theadhesive film may include a porous metal layer having a plurality ofpores therein, a first adhesive layer on one side of the porous metallayer, and an adhesive substance at least partially filling the pores ofthe porous metal layer.

Example embodiments are also directed to a semiconductor package,including a package substrate, a semiconductor chip on the packagesubstrate, a heat radiator covering the semiconductor chip, and anadhesive film between the semiconductor chip and the heat radiator. Theadhesive film may include a first adhesive layer on a top surface of thesemiconductor chip, a porous metal layer on a top surface of the firstadhesive layer, and an adhesive substance at least partially filling aninside of the porous metal layer.

BRIEF DESCRIPTION OF THE DRAWINGS

Features will become apparent to those of skill in the art by describingin detail example embodiments with reference to the attached drawings inwhich:

FIG. 1 illustrates a cross-sectional view showing an adhesive filmaccording to an example embodiment.

FIGS. 2 and 3 illustrate enlarged views showing section A of FIG. 1.

FIG. 4 illustrates a cross-sectional view showing an adhesive filmaccording to an example embodiment.

FIG. 5 illustrates an enlarged view showing section B of FIG. 4.

FIG. 6 illustrates a cross-sectional view showing processing of anadhesive film according to a comparative example.

FIG. 7 illustrates a cross-sectional view showing processing of anadhesive film according to an example embodiment.

FIGS. 8 to 10 illustrate cross-sectional views showing stages in amethod of manufacturing an adhesive film according to an exampleembodiment.

FIG. 11 illustrates a cross-sectional view showing a semiconductorapparatus according to an example embodiment.

FIGS. 12 to 14 illustrate cross-sectional views showing a semiconductorpackage according to an example embodiment.

DETAILED DESCRIPTION

The following will now describe an adhesive film according to thepresent example embodiment with reference to the accompanying drawings.

FIG. 1 illustrates a cross-sectional view showing an adhesive filmaccording to an example embodiment. FIGS. 2 and 3 illustrate enlargedviews showing section A of FIG. 1.

Referring to FIGS. 1 and 2, an adhesive film AF may be a thermallyconductive adhesive film and may include a first adhesive layer 10, ametal layer 20, an adhesive substance 40, and first thermal conductivemembers 12.

The first adhesive layer 10 may be provided to have a film shape. Thefirst adhesive layer 10 may include a non-conductive, e.g., electricallynon-conductive, material. The first adhesive layer 10 may include anadhesive polymer. For example, the first adhesive layer 10 may includeone or more of an acrylic polymer, an epoxy-based polymer, or aurethane-based polymer. The material of the first adhesive layer 10 mayinclude another suitable adhesive polymer.

The metal layer 20 may be provided at a side of the first adhesive layer10. The metal layer 20 may have a film shape. The metal layer 20 mayinclude a material whose thermal conductivity is high. The metal layer20 may include metal. For example, the metal layer 20 may include one ormore of copper (Cu), nickel (Ni), iron (Fe), silver (Ag), zinc (Zn),aluminum (Al), or magnesium (Mg), or an alloy thereof. The alloy mayinclude, e.g., aluminum-magnesium-copper alloy (for example, AlMg₁₅Cu₁₀)or zinc-aluminum-magnesium alloy (for example, ZnAl_(3.3)Mg_(3.3)). Thematerial of the metal layer 20 may include another suitable metal oralloy having a high thermal conductivity.

The metal layer 20 may have a porous shape. For example, the metal layer20 may have a plurality of pores PO therein. The pores PO may be formedwithin the metal layer 20, and one or more of the pores PO may be formedin contact with a surface, or at a surface of, the metal layer 20, e.g.,at an interface between the first adhesive layer 10 and the metal layer20. For example, one or more of the pores PO may be exposed at thesurface of the metal layer 20. The metal layer 20 may have a porosity ofabout 30% to about 100%. In this description, the term “porosity” meansa fraction of the volume of the pores over the total volume of the metallayer 20. The pores PO may have spherical, oval, or tunnel shapes. Eachof the pores PO may have a major axis WT1 with a length of about 5 μm toabout 3000 μm. The pores PO may be spatially connected to neighboringother pores PO. The metal layer 20 may be provided in the form of aporous shape or a metal sponge. Thus, the adhesive film AF may increasein workability (for example, machinability). For example, the metallayer 20 may improve in bending characteristics, ductilecharacteristics, or cut surface characteristics (the cut surfacecharacteristics of the metal layer 20 will be further discussed belowwith reference to FIGS. 6 and 7).

The adhesive substance 40 may be impregnated into the metal layer 20.For example, the adhesive substance 40 may, e.g., at least partially,fill the pores PO of the metal layer 20. The metal layer 20 may besupported by the adhesive substance 40 disposed in the metal layer 20(or in the pores PO), and accordingly the shape of the metal layer 20may be prevented from being excessively deformed. For example, theadhesive substance 40 may prevent the metal layer 20 from being modified(by external force).

Because one or more of the pores PO are formed in contact with thesurface of the metal layer 20, the adhesive substance 40 may be exposedat the surface of the metal layer 20. For example, the metal layer 20may have a first surface 20 a with which the first adhesive layer 10 isin contact, and on which the adhesive substance 40 is exposed, which maycause the adhesive substance 40 to contact the first adhesive layer 10.The metal layer 20 may have adhesiveness on the first surface 20 a onwhich the adhesive substance 40 is exposed. The adhesive substance 40may rigidly attach the metal layer 20 to the first adhesive layer 10.Therefore, the metal layer 20 may not be delaminated (or, dislodged)from the first adhesive layer 10, and the adhesive film AF may increasein structural stability.

The adhesive substance 40 may be exposed on a second surface 20 b of themetal layer 20, which second surface 20 b faces the first surface 20 a.The metal layer 20 may have adhesiveness on the second surface 20 b onwhich the adhesive substance 40 is exposed. Thus, the adhesive film AFmay have adhesiveness both (a) on one side of the first adhesive layer10 and (b) on an opposite side of the metal layer 20, and accordinglymay be used as a double-sided adhesive film.

The adhesive substance 40 may include an adhesive polymer. The adhesivesubstance 40 may include the same material as that of the first adhesivelayer 10. For example, the adhesive substance 40 may include one or moreof an acrylic polymer, an epoxy-based polymer, or a urethane-basedpolymer. When the adhesive substance 40 includes the same material asthat of the first adhesive layer 10, the adhesive substance 40 may havea continuous configuration with the first adhesive layer 10, and aninvisible or imperceptible interface may be provided between theadhesive substance 40 and the first adhesive layer 10. For example, theadhesive substance 40 and the first adhesive layer 10 may be provided inthe form of a single body. The adhesive substance 40 may be a portion ofthe first adhesive layer 10 impregnated into the pores PO of the metallayer 20. In another implementation, when the adhesive substance 40includes a different material from that of the first adhesive layer 10,a visible or perceptible interface may be provided between the adhesivesubstance 40 and the first adhesive layer 10.

The first thermal conductive members 12 may be provided in the firstadhesive layer 10. The first thermal conductive members 12 may have,e.g., bead, wire, or rod shapes. Each of the first thermal conductivemembers 12 may have a size less than that of the pore PO of the metallayer 20. Each of the first thermal conductive members 12 may have amajor axis WT2 with a length of about 1 μm to about 1500 μm. In anotherimplementation, the, e.g., average, size of the first thermal conductivemembers 12 may be greater than the, e.g., average, size of the pore PO.The first thermal conductive members 12 may be distributed in the firstadhesive layer 10. The first thermal conductive members 12 may have oroccupy a volume fraction of about 1% to about 15% over the volume of thefirst adhesive layer 10. For example, about 1% to about 15% of thevolume of the first adhesive layer 10 may be occupied by the firstthermal conductive members 12. The first thermal conductive members 12may increase thermal conductivity of the first adhesive layer 10. As aresult, the adhesive film AF may increase in thermal conductivity. Inaddition, when the size of the first thermal conductive members 12 isless than that of the pore PO, the first thermal conductive members 12may be distributed in the adhesive substance 40 filling the pores PO.The first thermal conductive members 12 may thus increase thermalconductivity of the metal layer 20. In another implementation, as shownin FIG. 3, the first thermal conductive members 12 may not be providedeither in the adhesive substance 40 or in the adhesive film AF.

The following will discuss the embodiment shown in FIG. 2. The firstthermal conductive members 12 may include a dielectric material. Thefirst thermal conductive members 12 may include a material whose thermalconductivity is high. For example, the first thermal conductive members12 may include one or more of amorphous silicon oxide (SiO₂),crystalline silicon oxide, aluminum oxide (Al₂O₃), magnesium oxide(MgO), zinc oxide (ZnO), silicon carbide (SiC), aluminum nitride (AlN),beryllium oxide (BeO), boron nitride (BN), or diamond. Additionally oralternatively, the first thermal conductive members 12 may include adielectric material whose thermal conductivity is high.

The adhesive film AF including the metal layer 20 and the first adhesivelayer 10 may have a combined thickness HT of about 10 μm to about 10000μm.

The adhesive film AF may further include passivation layers 32 and 34.For example, a first passivation layer 32 may be provided on a bottomsurface, e.g., a surface opposite the metal layer 20, of the firstadhesive layer 10, and a second passivation layer 34 may be provided onthe second surface 20 b of the metal layer 20. The first passivationlayer 32 may cover the bottom surface of the first adhesive layer 10 andmay prevent the first adhesive layer 10 from being contaminated withforeign impurities. The second passivation layer 34 may cover the secondsurface 20 b of the metal layer 20 and may prevent the metal layer 20from being contaminated with foreign impurities. The first passivationlayer 32 and the second passivation layer 34 may be disposed alongsurfaces of the first adhesive layer 10 and the metal layer 20,respectively, and may protect the adhesive film AF against foreignimpurities until the adhesive film AF is ready to be used. The first andsecond passivation layers 32 and 34 may protect the adhesive film AFagainst foreign impurities, and may be removed when the adhesive film AFis used. The first and second passivation layers 32 and 34 may include,e.g., polyethylene terephthalate (PET) or paper. In otherimplementations, one or none of the first and second passivation layers32 and 34 may be provided.

FIG. 4 illustrates a cross-sectional view showing an adhesive filmaccording to an example embodiment. FIG. 5 illustrates an enlarged viewshowing section B of FIG. 4. For convenience of description, thefollowing will mainly explain differences from those discussed withreference to FIGS. 1 and 2.

Referring to FIGS. 4 and 5, a second adhesive layer 50 may be providedon the metal layer 20. The second adhesive layer 50 may be disposed onone side of the metal layer 20, which one side stands opposite the firstadhesive layer 10. For example, the metal layer 20 may be providedbetween the first adhesive layer 10 and the second adhesive layer 50.Because the first and second adhesive layers 10 and 50 are provided onopposite sides of the metal layer 20, the adhesive film AF may be usedas a double-sided adhesive film and may increase in adhesiveness. Thesecond adhesive layer 50 may have a film shape. The second adhesivelayer 50 may include an, e.g., electrically, non-conductive material.The second adhesive layer 50 may include an adhesive polymer. The secondadhesive layer 50 may include the same material as that of the firstadhesive layer 10. For example, the second adhesive layer 50 may includeone or more of an acrylic polymer, an epoxy-based polymer, or aurethane-based polymer. When the second adhesive layer 50 includes thesame material as that of the adhesive substance 40, the second adhesivelayer 50 may have a continuous configuration with the adhesive substance40, and an invisible or imperceptible interface may be provided betweenthe adhesive substance 40 and the second adhesive layer 50. For example,the adhesive substance 40 and the second adhesive layer 50 may beprovided in the form of a single body. The adhesive substance 40 may bea portion of the second adhesive layer 50 impregnated into the pores POof the metal layer 20. When the first adhesive layer 10, the adhesivesubstance 40, and the second adhesive layer 50 include the samematerial, the first adhesive layer 10, the adhesive substance 40, andthe second adhesive layer 50 may be provided in the form of a singlebody. In another implementation, when the second adhesive layer 50includes a different material from that of the adhesive substance 40, avisible or perceptible interface may be provided between the adhesivesubstance 40 and the second adhesive layer 50.

Second thermal conductive members 52 may be provided in the secondadhesive layer 50. The second thermal conductive members 52 may havebead, wire, or rod shapes. Each of the second thermal conductive members52 may have an, e.g., average, size less than an, e.g., average, size ofthe pore PO of the metal layer 20. Each of the second thermal conductivemembers 52 may have a major axis with a length of about 1 μm to about1500 μm. In another implementation, the, e.g., average, size of thesecond thermal conductive members 52 may be greater than the, e.g.,average, size of the pore PO. The second thermal conductive members 52may be distributed in the second adhesive layer 50. The second thermalconductive members 52 may have a volume fraction of about 1% to about50% over the volume of the second adhesive layer 50. For example, about1% to about 50% of the volume fraction of the second adhesive layer 50may be occupied by the second thermal conductive members 52. The secondthermal conductive members 52 may increase thermal conductivity of thesecond adhesive layer 50. As a result, the adhesive film AF may increasein thermal conductivity. In another implementation, the second thermalconductive members 52 may not be provided in the second adhesive layer50. The second thermal conductive members 52 may include a dielectricmaterial. The second thermal conductive members 52 may include amaterial whose thermal conductivity is high. The second thermalconductive members 52 may include the same material as that of the firstthermal conductive members 12. For example, the second thermalconductive members 52 may include one or more of amorphous silicon oxide(SiO₂), crystalline silicon oxide, aluminum oxide (Al₂O₃), magnesiumoxide (MgO), zinc oxide (ZnO), silicon carbide (SiC), aluminum nitride(AlN), beryllium oxide (BeO), boron nitride (BN), or diamond.

FIG. 6 illustrates a cross-sectional view showing processing of anadhesive film according to a comparative example.

In the comparative example illustrated in FIG. 6, an adhesive film AF′includes a metal layer 20′ provided on an adhesive layer 10′. Theadhesive film AF′ may be cut by a blade BL or a sawing process and thenattached to a target object, or attached to a target object and then cuttogether with the target object. When the adhesive film AF′ is soprocessed, the metal layer 20′ may be deformed. For example, as shown inFIG. 6, the blade BL may cut the adhesive film AF′ in such a way that aboundary between the metal layer 20′ and the blade BL is deformed byshear stress caused by friction between the metal layer 20′ and theblade BL. The shear stress may cause slip of crystals of the metal layer20′ made of only metal, which may result in a burr or pick-up phenomenonin which the blade BL drags a cutting portion of the metal layer 20′.

FIG. 7 illustrates a cross-sectional view showing processing of anadhesive film according to an example embodiment.

Referring to FIG. 7, the adhesive film AF may be cut and then attachedto a target object, or attached to a target object and then cut togetherwith the target object. When the adhesive film AF is processed, themetal layer 20 may be free of deformation. For example, as shown in FIG.7, the blade BL may cut the adhesive film AF. In this case, the blade BLmay alternately meet the metal layer 20 and the pores PO along amovement path of the blade BL. It may thus be possible to minimize orreduce a burr or pick-up phenomenon of the metal layer 20 during the cutprocess. In addition, the metal layer 20 may be supported by theadhesive substance 40 in the pores PO, and thus prevented fromdeformation. As a result, according to the present example embodiment,the adhesive film AF may improve in surface characteristics during workprocesses and increase in structural stability.

FIGS. 8 to 10 illustrate cross-sectional views showing stages in amethod of manufacturing an adhesive film according to an exampleembodiment.

Referring to FIG. 8, a metal layer 20 may be provided that has a firstsurface 20 a and a second surface 20 b opposite the first surface 20 a.The metal layer 20 may be formed by forming a metal film including dummyparticles and then removing the dummy particles. In anotherimplementation, the metal layer 20 may be formed by forming a metallicfiber in the form of a textile or non-woven fabric. The metal layer 20may be formed by various methods different from those discussed above.The metal layer 20 may have a plurality of pores PO therein. The metallayer 20 may be formed to have a porosity of about 30% to about 100%.

Referring to FIG. 9, a first adhesive layer 10 may be provided on thefirst surface 20 a of the metal layer 20. The first adhesive layer 10may be provided in the form of a film shape. The first adhesive layer 10may include an, e.g., electrically, non-conductive material, e.g., maybe formed of a non-conductive material such as a non-conductive polymer,and/or may be formed to include a non-conductive material such as thefirst thermal conductive members 12. The first adhesive layer 10 mayinclude an adhesive polymer.

A portion of the first adhesive layer 10 may be impregnated into thepores PO of the metal layer 20. For example, the first adhesive layer 10may be pressed against the metal layer 20. The first adhesive layer 10may be pressure-deformed to flow into the pores PO of the metal layer20. In another implementation, the first adhesive layer 10 may be heatedor melted to flow into the pores PO of the metal layer 20. A portion ofthe first adhesive layer 10 may flow into the pores PO of the metallayer 20 to form an adhesive substance 40, and other portion of thefirst adhesive layer 10 may remain on the metal layer 20.

In another example embodiment, an adhesive solution may be impregnatedinto the pores PO of the metal layer 20 to form an adhesive substance40, and then the first surface 20 a of the metal layer 20 may beattached with a first adhesive layer 10 that is formed in an individualprocess.

Afterwards, first and second passivation layers (see 32 and 34 ofFIG. 1) may be attached to cover the metal layer 20 and the firstadhesive layer 10, which may fabricate an adhesive film AF of FIG. 1.

Referring to FIG. 10, after filling the pores PO with the first adhesivelayer 10, a process of FIG. 10 may be successively performed. Forexample, the first adhesive layer 10 may be continuously pressurized ormelted to flow into the pores PO of the metal layer 20. Therefore, thefirst adhesive layer 10 on the first surface 20 a of the metal layer 20may fill all of the pores PO, and may flow out through the pores PO ontothe second surface 20 b of the metal layer 20, e.g., in the case of anopen cell structure. A first portion of the first adhesive layer 10 mayflow out onto the second surface 20 b of the metal layer 20 to form asecond adhesive layer 50, a second portion of the first adhesive layer10 may flow into the pores PO of the metal layer 20 to form an adhesivesubstance 40, and a third portion of the first adhesive layer 10 mayremain on the metal layer 20.

Afterwards, first and second passivation layers (see 32 and 34 ofFIG. 1) may be attached to cover the first and second adhesive layers 10and 50, which may fabricate an adhesive film AF of FIG. 3.

An adhesive film according to an example embodiment may be used forvarious semiconductor apparatuses.

FIG. 11 illustrates a cross-sectional view showing a semiconductorapparatus according to an example embodiment.

Referring to FIG. 11, a semiconductor apparatus 1000 may have aconfiguration in which an adhesive film is used to attach an electronicdevice to a substrate. The semiconductor apparatus 1000 may be providedin the form of a semiconductor package similar to those discussed below.

A substrate 110 may be provided. The substrate 110 may be asemiconductor substrate, an integrated circuit board (PCB), or anothersuitable substrate.

The substrate 110 may be provided thereon with an exothermic device 120encapsulated with a mold layer 130. In this description, the exothermicdevice 120 may be any device from which heat is produced depending onan, e.g., electrical, operation thereof. If excessive heating occurs,e.g., due to heat generated during operation of the exothermic device120, the exothermic device 120 may be fractured, and thus it may bedesirable to radiate the heat. The exothermic device 120 may bewire-bonded to the substrate 110 or connected through other electricalconnections to an external device.

Referring together to FIGS. 1 to 5 and 11, an adhesive film AF may beprovided between the substrate 110 and the exothermic device 120. Theadhesive film AF may be one selected from the adhesive films that arediscussed with reference to FIGS. 1 to 5, from which the passivationlayers (see 32 and 34 of FIG. 1 or 4) are removed. The adhesive film AFmay attach the exothermic device 120 to a top surface of the substrate110. For example, the metal layer 20 may be attached to the top surfaceof the substrate 110, and the first adhesive layer 10 may be attached tothe exothermic device 120. In another implementation, or vice versa tothat above, the first adhesive layer 10 may be attached to the topsurface of the substrate 110, and the metal layer 20 may be attached tothe exothermic device 120. In this case, to electrically insulate theexothermic device 120 from the adhesive film AF or the substrate 110,the metal layer 20 may be attached to an inactive surface of theexothermic device 120. As discussed with reference to FIGS. 1 and 2, theadhesive film AF according to an example embodiment may have an adhesiveforce on one side of the metal layer 20, and accordingly the exothermicdevice 120 may be attached to the substrate 110. When rigid adhesivenessis desired, the adhesive film AF may use the same adhesive filmdiscussed with reference to FIGS. 4 and 5. For example, the adhesivefilm AF may further include the second adhesive layer (see 50 of FIG. 4)disposed on the metal layer 20. In this case, the first adhesive layer10 may be attached to the top surface of the substrate 110, and thesecond adhesive layer 50 may be attached to the one side, or theinactive surface, of the exothermic device 120. As a result, theexothermic device 120 may be rigidly attached to the substrate 110. Inaddition, the adhesive film AF may have the first thermal conductivemembers (see 12 of FIGS. 1 to 5) distributed in the first adhesive layer10. Hence, the adhesive film AF may have high thermal conductivity inthe metal layer 20 and the first adhesive layer 10 as well. The adhesivefilm AF with high thermal conductivity may rapidly transfer heatgenerated from the exothermic device 120 and may contribute to thermalstability of the exothermic device 120.

Differently from that discussed with reference to FIG. 11, semiconductorapparatuses may have a configuration in which one or more adhesive filmsare used to attach electronic devices to each other. FIG. 12 illustratesa cross-sectional view showing a semiconductor package according to anexample embodiment.

Referring to FIG. 12, a semiconductor package 2000 may include a packagesubstrate 210. The package substrate 210 may be a semiconductorsubstrate, an integrated circuit board (PCB), or another suitablesubstrate.

A first semiconductor chip 220 may be mounted on the package substrate210. For example, the first semiconductor chip 220 may be flip-chipmounted on a top surface of the package substrate 210. The firstsemiconductor chip 220 may have a top surface as an inactive surface anda bottom surface, which faces the package substrate 210, as an activesurface. The first semiconductor chip 220 may be an exothermic device.

At least one second semiconductor chip 230 may be mounted on the firstsemiconductor chip 220. The second semiconductor chip 230 may be mountedon the package substrate 210. For example, the second semiconductor chip230 may be wire-bonded to the top surface of the package substrate 210.The second semiconductor chip 230 may have a top surface as an activesurface and a bottom surface, which faces the first semiconductor chip220, as an inactive surface. The package substrate 210 may be providedwith a mold layer 240 thereon that encapsulates the first and secondsemiconductor chips 220 and 230.

Referring together to FIGS. 1 to 5 and 12, an adhesive film AF may beprovided between the first semiconductor chip 220 and the secondsemiconductor chip 230. The adhesive film AF may be one selected fromthe adhesive films that are discussed with reference to FIGS. 1 to 5,from which the passivation layers (see 32 and 34 of FIG. 1 or 4) areremoved. The adhesive film AF may attach the second semiconductor chip230 to the top surface of the first semiconductor chip 220. For example,the metal layer 20 may be attached to the first semiconductor chip 220,and the first adhesive layer 10 may be attached to the secondsemiconductor chip 230. The adhesive film AF according to the presentexample embodiment may have an adhesive force on one side of the metallayer 20, and accordingly the second semiconductor chip 230 may beattached to the first semiconductor chip 220. When rigid adhesiveness isdesired, the adhesive film AF may further include the second adhesivelayer (see 50 of FIG. 4) disposed on the metal layer 20. In this case,the first adhesive layer 10 may be attached to the top surface of thefirst semiconductor chip 220, and the second adhesive layer 50 may beattached to the bottom surface of the second semiconductor chip 230.Therefore, the first and second semiconductor chips 220 and 230 may berigidly attached to each other.

The adhesive film AF may have the first thermal conductive members (see12 of FIGS. 1 to 5) distributed in the first adhesive layer 10. Hence,the adhesive film AF may have high thermal conductivity in the metallayer 20 and the first adhesive layer 10 as well. Heat generated fromthe first semiconductor chip 220 may be rapidly outwardly dischargedthrough the second semiconductor chip 230 and the adhesive film AF withhigh thermal conductivity, which may result in contribution to thermalstability of the semiconductor package 2000.

In another implementation, the second semiconductor chip 230 may be anexothermic device. In this case, heat generated from the secondsemiconductor chip 230 may be discharged upwardly and/or transferredtoward the package substrate 210 through the adhesive film AF and thefirst semiconductor chip 220. For example, heat generated from thesecond semiconductor chip 230 may be distributed along various pathways,which may result in contribution to thermal stability of thesemiconductor package 2000.

Differently from that discussed with reference to FIG. 12, semiconductorpackages may have a configuration in which an adhesive film is used toattach a heat radiator, e.g., a heat sink, to an exothermic device. FIG.13 illustrates a cross-sectional view showing a semiconductor packageaccording to an example embodiment.

Referring to FIG. 13, a semiconductor package 3000 may include a heatsink 250 provided on the semiconductor package 2000 of FIG. 12. A secondadhesive film AF2 may be used to attach the heat sink 250 to thesemiconductor package 2000 (see 2000 of FIGS. 12), and a first adhesivefilm AF1 may be used to attach the first and second semiconductor chips220 and 230 to each other. Each of the first and second adhesive filmsAF1 and AF2 may be one selected from the adhesive films that arediscussed with reference to FIGS. 1 to 5, from which the passivationlayers (see 32 and 34 of FIG. 1 or 4) are removed. The second adhesivefilm AF2 may attach the heat sink 250 to the semiconductor package 2000.For example, the first adhesive layer 10 of the second adhesive film AF2may be attached to a top surface of the mold layer 240, and the metallayer 20 of the second adhesive film AF2 may be attached to a bottomsurface of the heat sink 250. The second adhesive film AF2 according tothe present example embodiment may have an adhesive force on one side ofthe metal layer 20, and accordingly the heat sink 250 may be attached tothe semiconductor package 2000.

The second adhesive film AF2 may have the first thermal conductivemembers (see 12 of FIGS. 1 to 5) distributed in the first adhesive layer10. Hence, the second adhesive film AF2 may have high thermalconductivity in the metal layer 20 and the first adhesive layer 10 aswell. Heat generated from the semiconductor package 2000 may be promptlytransferred toward the heat sink 250 through the second adhesive film AFwith high thermal conductivity, and thus the semiconductor package 3000may increase in heat radiation.

FIG. 14 illustrates a cross-sectional view showing a semiconductorpackage according to an example embodiment.

Referring to FIG. 14, a semiconductor package 4000 may include a lowerpackage and an upper package. The lower package may include a lowerpackage substrate 310, a lower semiconductor chip 320, and a lower moldlayer 330.

The lower package substrate 310 may be provided. The lower packagesubstrate 310 may be a printed circuit board (PCB) having signalpatterns on a top surface thereof. In another implementation, the lowerpackage substrate 310 may have a structure in which at least onedielectric layer and at least one connection line layer are alternatelystacked.

External terminals 312 may be disposed below the lower package substrate310. The external terminals 312 may include solder balls or solder pads,and the semiconductor package 4000 may include one of a ball grid array(BGA) type, a fine ball grid array (FBGA) type, or a land grid array(LGA), based on type of the external terminals 312.

The lower semiconductor chip 320 may be mounted on a top surface of thelower package substrate 310. For example, the lower semiconductor chip320 may be flip-chip mounted on the lower package substrate 310. Forexample, the lower semiconductor chip 320 may be electrically connectedto the lower package substrate 310 through lower chip terminals 322 suchas solder balls or solder bumps. Various methods may be utilized toelectrically connect the lower semiconductor chip 320 to the lowerpackage substrate 310. The lower semiconductor chip 320 may be, e.g., alogic chip or a memory chip. The logic chip may include a logic part anda memory part. For example, the memory chip may be DRAM, NAND flash, NORflash, PRAM, ReRAM, or MRAM.

The lower package substrate 310 may be provided thereon with the lowermold layer 330 encapsulating the lower semiconductor chip 320. Forexample, the lower mold layer 330 may be provided to expose a topsurface of the lower semiconductor chip 320, or differently from thatshown, to cover the top surface of the lower semiconductor chip 320. Inaddition, the lower mold layer 330 may have connection holes 332penetrating therethrough. The connection holes 332 may be spaced apartfrom the lower semiconductor chip 320. The lower mold layer 330 mayinclude a dielectric polymeric material such as an epoxy moldingcompound (EMC).

The connection holes 332 may be provided therein with connectionterminals 340 in contact with the lower package substrate 310. Theconnection terminals 340 may be coupled to the lower package substrate310. The connection terminals 340 may lie on the top surface of thelower package substrate 310 and have electrical connection with thelower package substrate 310 and the lower semiconductor chip 320.

The upper package may be provided on the lower package. The upperpackage may include an upper package substrate 350 and uppersemiconductor chips 360 and 370.

The upper package substrate 350 may be provided on the lower package.For example, the upper package substrate 350 may be disposed on thelower semiconductor chip 320 and the lower mold layer 330. Theconnection terminals 340 may be coupled to a bottom surface of the upperpackage substrate 350. The connection terminals 340 may lie on thebottom surface of the upper package substrate 350 and have electricalconnection with the upper package substrate 350.

A first upper semiconductor chip 360 and a second upper semiconductorchip 370 may be disposed on the upper package substrate 350. The firstand second upper semiconductor chips 360 and 370 may be spaced apartfrom each other. Each of the first and second upper semiconductor chips360 and 370 may be mounted on the upper package substrate 350. Aflip-chip bonding or wire bonding method may be used to mount the firstand second upper semiconductor chips 360 and 370 on a top surface of theupper package substrate 350. The first and second upper semiconductorchips 360 and 370 may be heat devices. The first and second uppersemiconductor chips 360 and 370 may be logic chips or memory chips.

A heat radiator 380 may be provided on the first and second uppersemiconductor chips 360 and 370. The heat radiator 380 may be providedon the upper package substrate 350, while surrounding the first andsecond upper semiconductor chips 360 and 370. The heat radiator 380 maybe formed to cover the first and second upper semiconductor chips 360and 370. The heat radiator 380 may be in contact with top surfaces ofthe first and second upper semiconductor chips 360 and 370. The heatradiator 380 may outwardly discharge heat generated from the first andsecond upper semiconductor chips 360 and 370. The heat radiator 380 mayinclude, e.g., a heat spreader or a heat sink.

Referring together to FIGS. 1 to 5 and 14, an adhesive film AF may beprovided between the heat radiator 380 and each of the first and secondupper semiconductor chips 360 and 370. The adhesive film AF may be oneselected from the adhesive films that are discussed with reference toFIGS. 1 to 5, from which the passivation layers (see 32 and 34 of FIG. 1or 4) are removed. The adhesive film AF may attach the heat radiator 380to the top surface of each of the first and second upper semiconductorchips 360 and 370. For example, the first adhesive layer 10 may beattached to the top surface of each of the first and second uppersemiconductor chips 360 and 370, and the metal layer 20 may be attachedto the heat radiator 380. When rigid adhesiveness is desired, theadhesive film AF may further include the second adhesive layer (see 50of FIG. 4) disposed on the metal layer 20. In this case, the firstadhesive layer 10 may be attached to the top surface of each of thefirst and second upper semiconductor chips 360 and 370, and the secondadhesive layer 50 may be attached to the heat radiator 380. Thus, thefirst and second upper semiconductor chips 360 and 370 may be rigidlyattached to the heat radiator 380.

The adhesive film AF may have the first thermal conductive members (see12 of FIGS. 1 to 5) distributed in the first adhesive layer 10. Hence,the adhesive film AF may have high thermal conductivity in the metallayer 20 and the first adhesive layer 10 as well. Heat generated fromthe first and second upper semiconductor chips 360 and 370 may beoutwardly discharged at high speeds through the heat radiator 380 andthe adhesive film AF with high thermal conductivity, which may result incontribution to thermal stability of the semiconductor package 4000.

The upper package substrate 350 may be provided thereon with an uppermold layer (not shown) encapsulating the first and second uppersemiconductor chips 360 and 370. The upper mold layer (not shown) mayinclude a dielectric polymeric material such as an epoxy moldingcompound (EMC).

As described above, example embodiments may provide an adhesive filmwith improved workability. For example, an adhesive film according to anexample embodiment may be provided with a metal layer in the form of aporous shape, which porous metal layer may increase workability of theadhesive film.

In addition, an adhesive substance filling pores of the metal layer mayrigidly attach the metal layer to a first adhesive layer. Therefore, themetal layer may not be delaminated from the first adhesive layer, andthe adhesive film may increase in structural stability.

Example embodiments may provide an adhesive film with increased thermalconductivity. For example, the adhesive film may include thermalconductive members in the first adhesive layer or the adhesive layer,and accordingly may increase in thermal conductivity.

Example embodiments may provide a semiconductor apparatus and asemiconductor package with enhanced thermal characteristics. Forexample, a semiconductor apparatus and a semiconductor package using theadhesive film may effectively discharge heat generated therefrom, andthe adhesive film may contribute to thermal stability of thesemiconductor apparatus and the semiconductor package.

Example embodiments have been disclosed herein, and although specificterms are employed, they are used and are to be interpreted in a genericand descriptive sense only and not for purpose of limitation. In someinstances, as would be apparent to one of ordinary skill in the art asof the filing of the present application, features, characteristics,and/or elements described in connection with a particular embodiment maybe used singly or in combination with features, characteristics, and/orelements described in connection with other embodiments unless otherwisespecifically indicated. Accordingly, it will be understood by those ofskill in the art that various changes in form and details may be madewithout departing from the spirit and scope of the present invention asset forth in the following claims.

What is claimed is:
 1. A thermal conductive film, comprising: a porousmetal layer consisting of a sponge, the sponge including poresdistributed as an open cell structure throughout an entire thickness ofthe sponge; an adhesive substance filling the pores of the porous metallayer; a first adhesive layer on one side of the porous metal layer; anda plurality of first thermal conductive members distributed in the firstadhesive layer.
 2. The thermal conductive film as claimed in claim 1,wherein the sponge is made entirely of metal.
 3. The thermal conductivefilm as claimed in claim 1, wherein a porosity of the porous metal layeris about 30% to less than 100%.
 4. The thermal conductive film asclaimed in claim 1, wherein: at least one of the pores is open at asurface of the porous metal layer, and the adhesive substance fillingthe at least one of the pores is exposed at the surface of the porousmetal layer.
 5. The thermal conductive film as claimed in claim 1,wherein: the adhesive substance and the first adhesive layer are incontact with each other at an interface between the porous metal layerand the first adhesive layer, and the adhesive substance and the firstadhesive layer are provided in the form of a single body including thesame material.
 6. The thermal conductive film as claimed in claim 1,wherein a major axis of the pores has a length of about 5 μm to about3000 μm.
 7. The thermal conductive film as claimed in claim 1, whereinthe plurality of first thermal conductive members have one or more of abead shape, a wire shape, or a rod shape.
 8. The thermal conductive filmas claimed in claim 1, wherein the plurality of first thermal conductivemembers occupy a volume fraction of about 1% to about 50% of a totalvolume of the first adhesive layer.
 9. The thermal conductive film asclaimed in claim 1, wherein the plurality of first thermal conductivemembers are distributed in the adhesive substance.
 10. The thermalconductive film as claimed in claim 1, further comprising a secondadhesive layer on another side of the porous metal layer, the other sidebeing opposite to the first adhesive layer.
 11. The thermal conductivefilm as claimed in claim 10, further comprising a plurality of secondthermal conductive members distributed in the second adhesive layer,wherein: the first adhesive layer includes a different material fromthat of the adhesive substance, and the second adhesive layer includes adifferent material from that of the adhesive sub stance.
 12. The thermalconductive film as claimed in claim 10, further comprising: a firstremovable polyethylene terephthalate (PET) or paper layer covering thesecond adhesive layer; and a second removable polyethylene terephthalate(PET) or paper layer covering the first adhesive layer.
 13. A thermalconductive film, comprising: a porous metal layer consisting of a spongemade entirely of metal, the sponge including pores distributed as anopen cell structure throughout an entire thickness of the sponge; anadhesive substance filling the pores of the porous metal layer; a firstadhesive layer on one side of the porous metal layer; and a plurality ofthermal conductive members distributed in the adhesive substance. 14.The thermal conductive film as claimed in claim 13, wherein theplurality of thermal conductive members are distributed in the firstadhesive layer.
 15. The thermal conductive film as claimed in claim 13,further comprising a second adhesive layer on another side of the porousmetal layer, the other side being opposite to the first adhesive layer.16. The thermal conductive film as claimed in claim 15, wherein: theplurality of thermal conductive members are distributed in the firstadhesive layer, the first adhesive layer includes a different materialfrom that of the adhesive substance, and the second adhesive layerincludes a different material from that of the adhesive substance. 17.The thermal conductive film as claimed in claim 13, wherein: at leastone of the pores is open at a surface of the porous metal layer, and theadhesive substance filling the at least one of the pores is exposed atthe surface of the porous metal layer.
 18. The thermal conductive filmas claimed in claim 13, wherein: the adhesive substance and the firstadhesive layer are in contact with each other at an interface betweenthe porous metal layer and the first adhesive layer, and the adhesivesubstance and the first adhesive layer are provided in the form of asingle body including the same material.
 19. The thermal conductive filmas claimed in claim 13, wherein a major axis of the pores has a lengthof about 5 μm to about 3000 μm.
 20. The thermal conductive film asclaimed in claim 13, wherein the plurality of thermal conductive membersoccupy a volume fraction of about 1% to about 50% of a total volume ofthe first adhesive layer.